 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUZ32 Semiconductor Data Sheet October 1998 File Number 2416.1 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features * 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power * rDS(ON) = 0.400 (BUZ32) field effect transistor designed for applications such as * SOA is Power Dissipation Limited /Subject switching regulators, switching converters, motor drivers, * Nanosecond Switching Speeds 9.5A, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. 00V, * Linear Transfer Characteristics This type can be operated directly from integrated circuits. .400 * High Input Impedance hm, N- Formerly developmental type TA17412. * Majority Carrier Device hannel * Related Literature ower Ordering Information - TB334 "Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRAND OSComponents to PC Boards" BUZ32 TO-220AB BUZ32 ET) /Author NOTE: When ordering, use the entire part number. Symbol ) D /Keyords G Harris emiS onducor, Nhannel ower Packaging OSJEDEC TO-220AB ET, OSOURCE DRAIN 20AB) GATE /Creator DRAIN (FLANGE) ) /DOCIN O pdfark /Pageode /UseOutines /DOCIEW dfmark 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright (c) Harris Corporation 1998 BUZ32 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified BUZ32 200 200 9.5 38 20 75 150 0.6 -55 to 150 E 55/150/56 300 260 UNITS V V A A V W mJ W/oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current, TC = 55oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V VGS = VDS, ID = 1mA (Figure 9) TJ = 25oC, VDS = 200V, VGS = 0V TJ = 125oC, VDS = 200V, VGS = 0V VGS = 20V, VDS = 0V ID = 4.5A, VGS = 10V (Figure 8) VDS = 25V, ID = 4.5A (Figure 11) VCC = 30V, ID 2.9A, VGS = 10V, RGS = 50, RL = 10. (Figures 16, 17) MIN 200 2.1 2.2 VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) TYP 3 20 100 10 0.35 5.0 30 40 110 60 1500 250 70 1.67 75 MAX 4 250 1000 100 0.4 45 60 140 80 2000 400 120 UNITS V V A A nA S ns ns ns ns pF pF pF oC/W oC/W Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) gfs td(ON) tr td(OFF) tf CISS COSS CRSS RJC RJA Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulsed Source to Drain Current Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse Test: Pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 20V, starting TJ = 25oC, L = 3.3H, RG = 50, IPEAK = 9A. (See Figures 14 and 15). SYMBOL ISD ISDM VSD trr QRR TEST CONDITIONS TC = 25oC TC = 25oC TJ = 25oC, ISD = 19A, VGS = 0V TJ = 25oC, ISD = 9.5A, dISD/dt = 100A/s, VR = 100V MIN TYP 1.3 400 6.0 MAX 9.5 38 1.7 UNITS A A V ns C 2 BUZ32 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) Unless Otherwise Specified 12 VGS 10V 10 8 6 0.6 0.4 4 2 0.2 .0 0 25 50 75 100 TC , CASE TEMPERATURE (oC) 125 150 0 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, TRANSIENT THERMAL IMPEDANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 0 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 0.01 10-5 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 1.5s ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10s 101 100s OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED 101 1ms 10ms 100ms DC 20 PD = 75W 8.0V 10V 20V 7.5V VGS = 7.0V VGS = 6.5V VGS = 6.0V 15 10 VGS = 5.5V VGS = 5.0V 100 5 VGS = 4.5V VGS = 4.0V 10-1 100 102 VDS, DRAIN TO SOURCE VOLTAGE (V) 103 0 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 3 BUZ32 Typical Performance Curves IDS(ON), DRAIN TO SOURCE CURRENT (A) 20 PULSE DURATION = 80s VDS = 25V TJ = 25oC Unless Otherwise Specified (Continued) 1.5 PULSE DURATION = 80s rDS(ON), DRAIN TO SOURCE ON RESISTANCE () VGS = 5V 1.0 5.5V 6V 6.5V 10 7V 0.5 7.5V 8V 9V 10V 20V 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 10 0 0 10 ID, DRAIN CURRENT (A) 20 FIGURE 6. TRANSFER CHARACTERISTICS FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT VGS(TH), GATE THRESHOLD VOLTAGE (V) 0.9 PULSE DURATION = 80s VGS = 10V, ID = 4.5A rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 4 VDS = VGS ID = 1mA 3 0.6 2 0.3 1 0 -40 0 40 80 120 160 0 -50 0 50 100 150 TJ , JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 8 VGS = 0, f = 1MHz gfs, TRANSCONDUCTANCE (S) PULSE DURATION = 80s VDS = 25V C, CAPACITANCE (nF) 100 CISS 6 TJ = 25oC 4 COSS 10-1 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) CRSS 2 10-2 40 0 0 10 ID, DRAIN CURRENT (A) 20 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 4 BUZ32 Typical Performance Curves ISD, SOURCE TO DRAIN CURRENT (A) 102 PULSE DURATION = 80s Unless Otherwise Specified (Continued) 15 VGS, GATE TO SOURCE VOLTAGE (V) ID = 14.3A 101 TJ = 150oC TJ = 25oC 10 VDS = 40V VDS = 160V 5 100 10-1 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE TO DRAIN VOLTAGE (V) 3.0 0 0 10 20 30 40 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS 5 BUZ32 Test Circuits and Waveforms CURRENT REGULATOR (Continued) VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR Ig(REF) 0 FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS 6 |
Price & Availability of BUZ32
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |